[U-Boot] Q: NAND read/write: unaligned offset

[Andrew Dyer]

On Tue, Jul 5, 2011 at 10:50, Scott Wood <scottwood at freescale.com> wrote:
> On Fri, 1 Jul 2011 23:16:01 -0700
> Ran Shalit <ranshalit at gmail.com> wrote:
>
>> > I wanted to write different parts of the page each time. And now I
>> undertsand that
>> the ECC is stored for each page, which mean that what I am trying to do , is
>> impossible  (if I am using ecc),
>> i.e. writing the same page without erasing is not allowed when using ecc. Am
>> I right about this conclusion ?
>

The NAND I a familiar with (Micron) also has a limit on partial page
programming, it specifies a max of 4 partial page programming
accesses.   This is a 2k byte/page device, so I assume this is for
mapping 512 byte sectors in storage applications.

In MLC flash, I don't believe partial page access is allowed at all.

see http://download.micron.com/pdf/presentations/events/flash_mem_summit_jcooke_inconvenient_truths_nand.pdf
 for an overview as to why.