[PATCH 3/8] sunxi: parameterize H616 DRAM ODT values
Jernej Skrabec
jernej.skrabec at gmail.com
Sun Dec 11 17:32:08 CET 2022
While ODT values for same memory type are similar, they are not
necessary the same. Let's parameterize them and make parameter same as
in vendor DRAM settings. That way it will be easy to introduce new board
support.
Signed-off-by: Jernej Skrabec <jernej.skrabec at gmail.com>
---
.../include/asm/arch-sunxi/dram_sun50i_h616.h | 3 +
arch/arm/mach-sunxi/Kconfig | 15 +++++
arch/arm/mach-sunxi/dram_sun50i_h616.c | 59 ++++++++++++-------
configs/orangepi_zero2_defconfig | 3 +
4 files changed, 58 insertions(+), 22 deletions(-)
diff --git a/arch/arm/include/asm/arch-sunxi/dram_sun50i_h616.h b/arch/arm/include/asm/arch-sunxi/dram_sun50i_h616.h
index 134679d55205..c9e1f84bfcdd 100644
--- a/arch/arm/include/asm/arch-sunxi/dram_sun50i_h616.h
+++ b/arch/arm/include/asm/arch-sunxi/dram_sun50i_h616.h
@@ -144,6 +144,9 @@ struct dram_para {
u8 rows;
u8 ranks;
u8 bus_full_width;
+ u32 dx_odt;
+ u32 dx_dri;
+ u32 ca_dri;
};
diff --git a/arch/arm/mach-sunxi/Kconfig b/arch/arm/mach-sunxi/Kconfig
index dbe6005daab1..cad53f19912c 100644
--- a/arch/arm/mach-sunxi/Kconfig
+++ b/arch/arm/mach-sunxi/Kconfig
@@ -83,6 +83,21 @@ config DRAM_SUN50I_H616_UNKNOWN_FEATURE
---help---
Select this when DRAM on your H616 board needs this unknown
feature.
+
+config DRAM_SUN50I_H616_DX_ODT
+ hex "H616 DRAM DX ODT parameter"
+ help
+ DX ODT value from vendor DRAM settings.
+
+config DRAM_SUN50I_H616_DX_DRI
+ hex "H616 DRAM DX DRI parameter"
+ help
+ DX DRI value from vendor DRAM settings.
+
+config DRAM_SUN50I_H616_CA_DRI
+ hex "H616 DRAM CA DRI parameter"
+ help
+ CA DRI value from vendor DRAM settings.
endif
config SUN6I_PRCM
diff --git a/arch/arm/mach-sunxi/dram_sun50i_h616.c b/arch/arm/mach-sunxi/dram_sun50i_h616.c
index 49983bf7a1b8..06a07dfbf9cc 100644
--- a/arch/arm/mach-sunxi/dram_sun50i_h616.c
+++ b/arch/arm/mach-sunxi/dram_sun50i_h616.c
@@ -234,37 +234,49 @@ static const u8 phy_init[] = {
0x09, 0x05, 0x18
};
-static void mctl_phy_configure_odt(void)
+static void mctl_phy_configure_odt(struct dram_para *para)
{
- writel_relaxed(0xe, SUNXI_DRAM_PHY0_BASE + 0x388);
- writel_relaxed(0xe, SUNXI_DRAM_PHY0_BASE + 0x38c);
+ unsigned int val;
- writel_relaxed(0xe, SUNXI_DRAM_PHY0_BASE + 0x3c8);
- writel_relaxed(0xe, SUNXI_DRAM_PHY0_BASE + 0x3cc);
+ val = para->dx_dri & 0x1f;
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x388);
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x38c);
- writel_relaxed(0xe, SUNXI_DRAM_PHY0_BASE + 0x408);
- writel_relaxed(0xe, SUNXI_DRAM_PHY0_BASE + 0x40c);
+ val = (para->dx_dri >> 8) & 0x1f;
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x3c8);
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x3cc);
- writel_relaxed(0xe, SUNXI_DRAM_PHY0_BASE + 0x448);
- writel_relaxed(0xe, SUNXI_DRAM_PHY0_BASE + 0x44c);
+ val = (para->dx_dri >> 16) & 0x1f;
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x408);
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x40c);
- writel_relaxed(0xe, SUNXI_DRAM_PHY0_BASE + 0x340);
- writel_relaxed(0xe, SUNXI_DRAM_PHY0_BASE + 0x344);
+ val = (para->dx_dri >> 24) & 0x1f;
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x448);
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x44c);
- writel_relaxed(0xe, SUNXI_DRAM_PHY0_BASE + 0x348);
- writel_relaxed(0xe, SUNXI_DRAM_PHY0_BASE + 0x34c);
+ val = para->ca_dri & 0x1f;
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x340);
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x344);
- writel_relaxed(0x8, SUNXI_DRAM_PHY0_BASE + 0x380);
- writel_relaxed(0x8, SUNXI_DRAM_PHY0_BASE + 0x384);
+ val = (para->ca_dri >> 8) & 0x1f;
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x348);
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x34c);
- writel_relaxed(0x8, SUNXI_DRAM_PHY0_BASE + 0x3c0);
- writel_relaxed(0x8, SUNXI_DRAM_PHY0_BASE + 0x3c4);
+ val = para->dx_odt & 0x1f;
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x380);
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x384);
- writel_relaxed(0x8, SUNXI_DRAM_PHY0_BASE + 0x400);
- writel_relaxed(0x8, SUNXI_DRAM_PHY0_BASE + 0x404);
+ val = (para->dx_odt >> 8) & 0x1f;
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x3c0);
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x3c4);
- writel_relaxed(0x8, SUNXI_DRAM_PHY0_BASE + 0x440);
- writel_relaxed(0x8, SUNXI_DRAM_PHY0_BASE + 0x444);
+ val = (para->dx_odt >> 16) & 0x1f;
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x400);
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x404);
+
+ val = (para->dx_odt >> 24) & 0x1f;
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x440);
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x444);
dmb();
}
@@ -722,7 +734,7 @@ static bool mctl_phy_init(struct dram_para *para)
writel(0x80, SUNXI_DRAM_PHY0_BASE + 0x45c);
if (IS_ENABLED(CONFIG_DRAM_ODT_EN))
- mctl_phy_configure_odt();
+ mctl_phy_configure_odt(para);
clrsetbits_le32(SUNXI_DRAM_PHY0_BASE + 4, 7, 0xa);
@@ -1007,6 +1019,9 @@ unsigned long sunxi_dram_init(void)
struct dram_para para = {
.clk = CONFIG_DRAM_CLK,
.type = SUNXI_DRAM_TYPE_DDR3,
+ .dx_odt = CONFIG_DRAM_SUN50I_H616_DX_ODT,
+ .dx_dri = CONFIG_DRAM_SUN50I_H616_DX_DRI,
+ .ca_dri = CONFIG_DRAM_SUN50I_H616_CA_DRI,
};
unsigned long size;
diff --git a/configs/orangepi_zero2_defconfig b/configs/orangepi_zero2_defconfig
index 877eccf31bd6..ca398faef1d3 100644
--- a/configs/orangepi_zero2_defconfig
+++ b/configs/orangepi_zero2_defconfig
@@ -6,6 +6,9 @@ CONFIG_DRAM_SUN50I_H616_WRITE_LEVELING=y
CONFIG_DRAM_SUN50I_H616_READ_CALIBRATION=y
CONFIG_DRAM_SUN50I_H616_READ_TRAINING=y
CONFIG_DRAM_SUN50I_H616_WRITE_TRAINING=y
+CONFIG_DRAM_SUN50I_H616_DX_ODT=0x8080808
+CONFIG_DRAM_SUN50I_H616_DX_DRI=0xe0e0e0e
+CONFIG_DRAM_SUN50I_H616_CA_DRI=0xe0e
CONFIG_MACH_SUN50I_H616=y
CONFIG_MMC0_CD_PIN="PF6"
CONFIG_R_I2C_ENABLE=y
--
2.38.1
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