[PATCH 3/8] sunxi: parameterize H616 DRAM ODT values
Andre Przywara
andre.przywara at arm.com
Wed Jan 4 01:36:41 CET 2023
On Sun, 11 Dec 2022 17:32:08 +0100
Jernej Skrabec <jernej.skrabec at gmail.com> wrote:
Hi Jernej,
> While ODT values for same memory type are similar, they are not
> necessary the same. Let's parameterize them and make parameter same as
> in vendor DRAM settings. That way it will be easy to introduce new board
> support.
checked that this results in the same parameters to writel().
One small thing below:
>
> Signed-off-by: Jernej Skrabec <jernej.skrabec at gmail.com>
> ---
> .../include/asm/arch-sunxi/dram_sun50i_h616.h | 3 +
> arch/arm/mach-sunxi/Kconfig | 15 +++++
> arch/arm/mach-sunxi/dram_sun50i_h616.c | 59 ++++++++++++-------
> configs/orangepi_zero2_defconfig | 3 +
> 4 files changed, 58 insertions(+), 22 deletions(-)
>
> diff --git a/arch/arm/include/asm/arch-sunxi/dram_sun50i_h616.h b/arch/arm/include/asm/arch-sunxi/dram_sun50i_h616.h
> index 134679d55205..c9e1f84bfcdd 100644
> --- a/arch/arm/include/asm/arch-sunxi/dram_sun50i_h616.h
> +++ b/arch/arm/include/asm/arch-sunxi/dram_sun50i_h616.h
> @@ -144,6 +144,9 @@ struct dram_para {
> u8 rows;
> u8 ranks;
> u8 bus_full_width;
> + u32 dx_odt;
> + u32 dx_dri;
> + u32 ca_dri;
> };
>
>
> diff --git a/arch/arm/mach-sunxi/Kconfig b/arch/arm/mach-sunxi/Kconfig
> index dbe6005daab1..cad53f19912c 100644
> --- a/arch/arm/mach-sunxi/Kconfig
> +++ b/arch/arm/mach-sunxi/Kconfig
> @@ -83,6 +83,21 @@ config DRAM_SUN50I_H616_UNKNOWN_FEATURE
> ---help---
> Select this when DRAM on your H616 board needs this unknown
> feature.
> +
> +config DRAM_SUN50I_H616_DX_ODT
> + hex "H616 DRAM DX ODT parameter"
> + help
> + DX ODT value from vendor DRAM settings.
> +
> +config DRAM_SUN50I_H616_DX_DRI
> + hex "H616 DRAM DX DRI parameter"
> + help
> + DX DRI value from vendor DRAM settings.
> +
> +config DRAM_SUN50I_H616_CA_DRI
> + hex "H616 DRAM CA DRI parameter"
> + help
> + CA DRI value from vendor DRAM settings.
> endif
>
> config SUN6I_PRCM
> diff --git a/arch/arm/mach-sunxi/dram_sun50i_h616.c b/arch/arm/mach-sunxi/dram_sun50i_h616.c
> index 49983bf7a1b8..06a07dfbf9cc 100644
> --- a/arch/arm/mach-sunxi/dram_sun50i_h616.c
> +++ b/arch/arm/mach-sunxi/dram_sun50i_h616.c
> @@ -234,37 +234,49 @@ static const u8 phy_init[] = {
> 0x09, 0x05, 0x18
> };
>
> -static void mctl_phy_configure_odt(void)
> +static void mctl_phy_configure_odt(struct dram_para *para)
> {
> - writel_relaxed(0xe, SUNXI_DRAM_PHY0_BASE + 0x388);
> - writel_relaxed(0xe, SUNXI_DRAM_PHY0_BASE + 0x38c);
> + unsigned int val;
>
> - writel_relaxed(0xe, SUNXI_DRAM_PHY0_BASE + 0x3c8);
> - writel_relaxed(0xe, SUNXI_DRAM_PHY0_BASE + 0x3cc);
> + val = para->dx_dri & 0x1f;
> + writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x388);
> + writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x38c);
>
> - writel_relaxed(0xe, SUNXI_DRAM_PHY0_BASE + 0x408);
> - writel_relaxed(0xe, SUNXI_DRAM_PHY0_BASE + 0x40c);
> + val = (para->dx_dri >> 8) & 0x1f;
> + writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x3c8);
> + writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x3cc);
>
> - writel_relaxed(0xe, SUNXI_DRAM_PHY0_BASE + 0x448);
> - writel_relaxed(0xe, SUNXI_DRAM_PHY0_BASE + 0x44c);
> + val = (para->dx_dri >> 16) & 0x1f;
> + writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x408);
> + writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x40c);
>
> - writel_relaxed(0xe, SUNXI_DRAM_PHY0_BASE + 0x340);
> - writel_relaxed(0xe, SUNXI_DRAM_PHY0_BASE + 0x344);
> + val = (para->dx_dri >> 24) & 0x1f;
> + writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x448);
> + writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x44c);
>
> - writel_relaxed(0xe, SUNXI_DRAM_PHY0_BASE + 0x348);
> - writel_relaxed(0xe, SUNXI_DRAM_PHY0_BASE + 0x34c);
> + val = para->ca_dri & 0x1f;
> + writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x340);
> + writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x344);
>
> - writel_relaxed(0x8, SUNXI_DRAM_PHY0_BASE + 0x380);
> - writel_relaxed(0x8, SUNXI_DRAM_PHY0_BASE + 0x384);
> + val = (para->ca_dri >> 8) & 0x1f;
> + writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x348);
> + writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x34c);
>
> - writel_relaxed(0x8, SUNXI_DRAM_PHY0_BASE + 0x3c0);
> - writel_relaxed(0x8, SUNXI_DRAM_PHY0_BASE + 0x3c4);
> + val = para->dx_odt & 0x1f;
> + writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x380);
> + writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x384);
>
> - writel_relaxed(0x8, SUNXI_DRAM_PHY0_BASE + 0x400);
> - writel_relaxed(0x8, SUNXI_DRAM_PHY0_BASE + 0x404);
> + val = (para->dx_odt >> 8) & 0x1f;
> + writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x3c0);
> + writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x3c4);
>
> - writel_relaxed(0x8, SUNXI_DRAM_PHY0_BASE + 0x440);
> - writel_relaxed(0x8, SUNXI_DRAM_PHY0_BASE + 0x444);
> + val = (para->dx_odt >> 16) & 0x1f;
> + writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x400);
> + writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x404);
> +
> + val = (para->dx_odt >> 24) & 0x1f;
> + writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x440);
> + writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x444);
>
> dmb();
> }
> @@ -722,7 +734,7 @@ static bool mctl_phy_init(struct dram_para *para)
> writel(0x80, SUNXI_DRAM_PHY0_BASE + 0x45c);
>
> if (IS_ENABLED(CONFIG_DRAM_ODT_EN))
> - mctl_phy_configure_odt();
> + mctl_phy_configure_odt(para);
>
> clrsetbits_le32(SUNXI_DRAM_PHY0_BASE + 4, 7, 0xa);
>
> @@ -1007,6 +1019,9 @@ unsigned long sunxi_dram_init(void)
> struct dram_para para = {
> .clk = CONFIG_DRAM_CLK,
> .type = SUNXI_DRAM_TYPE_DDR3,
> + .dx_odt = CONFIG_DRAM_SUN50I_H616_DX_ODT,
> + .dx_dri = CONFIG_DRAM_SUN50I_H616_DX_DRI,
> + .ca_dri = CONFIG_DRAM_SUN50I_H616_CA_DRI,
> };
> unsigned long size;
>
> diff --git a/configs/orangepi_zero2_defconfig b/configs/orangepi_zero2_defconfig
> index 877eccf31bd6..ca398faef1d3 100644
> --- a/configs/orangepi_zero2_defconfig
> +++ b/configs/orangepi_zero2_defconfig
> @@ -6,6 +6,9 @@ CONFIG_DRAM_SUN50I_H616_WRITE_LEVELING=y
> CONFIG_DRAM_SUN50I_H616_READ_CALIBRATION=y
> CONFIG_DRAM_SUN50I_H616_READ_TRAINING=y
> CONFIG_DRAM_SUN50I_H616_WRITE_TRAINING=y
> +CONFIG_DRAM_SUN50I_H616_DX_ODT=0x8080808
> +CONFIG_DRAM_SUN50I_H616_DX_DRI=0xe0e0e0e
> +CONFIG_DRAM_SUN50I_H616_CA_DRI=0xe0e
Can you make those values 8 nibbles and 4 nibbles long (so starting
with a 0)? It's somewhat confusing to read like this, it *looks* like a
32-bit value, but it's actually only 28 bits wide. This gets confusing
when matching up values against dumps or a hex editor.
With that fixed:
Reviewed-by: Andre Przywara <andre.przywara at arm.com>
Cheers,
Andre
> CONFIG_MACH_SUN50I_H616=y
> CONFIG_MMC0_CD_PIN="PF6"
> CONFIG_R_I2C_ENABLE=y
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